A novel high‐voltage solid‐state switch based on the SiC MOSFET series and its overcurrent protection

نویسندگان

چکیده

Abstract All‐solid‐state switches are one of the core components pulsed power supply systems. However, voltage level a single switch is limited. By optimizing chip structure, can be improved. Due to immaturity production process and positive correlation between blocking on‐resistance switch, it difficult improve continuous forward current simultaneously. The series‐connected way increase switch's without reducing current. Magnetically coupled isolated drive resistor‐capacitor forced equalization techniques investigated using multiple SiC metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) in series connections. Meanwhile, special overcurrent protection scheme designed reliability switch. Finally, high‐voltage solid‐state developed based on MOSFET connections, whose output pulse width adjustable from 20 300 μs, frequency 1 Hz 3 kHz, maximum reach 57 kV (1 Hz), time about μs.

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ژورنال

عنوان ژورنال: High voltage

سال: 2022

ISSN: ['2397-7264', '2096-9813']

DOI: https://doi.org/10.1049/hve2.12285